The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 15, 2009

Filed:

Nov. 01, 2005
Applicants:

Lana Hiului Chan, Santa Clara, CA (US);

Panya Wongsenakhum, Fremont, CA (US);

Joshua Collins, Sunnyvale, CA (US);

Inventors:

Lana Hiului Chan, Santa Clara, CA (US);

Panya Wongsenakhum, Fremont, CA (US);

Joshua Collins, Sunnyvale, CA (US);

Assignee:

Novellus Systems, Inc., San Jose, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/4763 (2006.01);
U.S. Cl.
CPC ...
Abstract

Improved methods for depositing low resistivity tungsten films are provided. The methods involve depositing a tungsten nucleation layer on a substrate and then depositing a tungsten bulk layer over the tungsten nucleation layer to form the tungsten film. The methods provide precise control of the nucleation layer thickness and improved step coverage. According to various embodiments, the methods involve controlling thickness and/or improving step coverage by exposing the substrate to pulse nucleation layer (PNL) cycles at low temperature. Also in some embodiments, the methods may improve resistivity by using a high temperature PNL cycle of a boron-containing species and a tungsten-containing precursor to finish forming the tungsten nucleation layer.


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