The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 15, 2009

Filed:

Jan. 30, 2003
Applicants:

Michael Fehrer, Bad Abbach, DE;

Berthold Hahn, Hemau, DE;

Volker Härle, Laaber, DE;

Stephan Kaiser, Regensburg, DE;

Frank Otte, Hannover, DE;

Andreas Plössl, Regensburg, DE;

Inventors:

Michael Fehrer, Bad Abbach, DE;

Berthold Hahn, Hemau, DE;

Volker Härle, Laaber, DE;

Stephan Kaiser, Regensburg, DE;

Frank Otte, Hannover, DE;

Andreas Plössl, Regensburg, DE;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/30 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method for producing a semiconductor component, in particular a thin-film component, a semiconductor layer being separated from a substrate by irradiation with a laser beam having a plateaulike spatial beam profile. Furthermore, the semiconductor layer, prior to separation, is applied to a carrier with an adapted thermal expansion coefficient. The method is suitable in particular for semiconductor layers containing a nitride compound semiconductor.


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