The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 15, 2009
Filed:
Aug. 14, 2006
Aurélie Tauzin, Grenoble, FR;
Sébastien Personnic, Grenoble, FR;
Frédéric Laugier, Saint-Egreve, FR;
Aurélie Tauzin, Grenoble, FR;
Sébastien Personnic, Grenoble, FR;
Frédéric Laugier, Saint-Egreve, FR;
S.O.I.Tec Silicon on Insulator Technologies, Bernin, FR;
Abstract
A method of fabricating a thin film is disclosed. The method comprises: implanting ions by bombarding a face of a substrate comprising a semiconductor material to form a concentrated layer of the implanted ions at a predetermined mean depth in the substrate, the concentrated layer and the face of the substrate defining a thin film therebetween; trapping contaminants included in the substrate or the thin film, in the concentrated layer by heat treating the substrate such that the heat treatment does not split the substrate at the concentrated layer; detaching the thin film from the substrate after the trapping by splitting the substrate at the concentrated layer; and withdrawing a zone of the thin film perturbed by the trapping and the detaching.