The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 15, 2009
Filed:
Sep. 13, 2005
Jong-pyo Kim, Gyeonggi-do, KR;
Jong-ho Lee, Gyeonggi-do, KR;
Hyung-suk Jung, Gyeonggi-do, KR;
Jung-hyoung Lee, Gyeonggi-do, KR;
Jong-Pyo Kim, Gyeonggi-do, KR;
Jong-Ho Lee, Gyeonggi-do, KR;
Hyung-Suk Jung, Gyeonggi-do, KR;
Jung-Hyoung Lee, Gyeonggi-do, KR;
Samsung Electronic Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
A dielectric multilayer structure of a microelectronic device, in which a leakage current characteristic and a dielectric constant are improved, is provided in an embodiment. The dielectric multilayer structure includes a lower dielectric layer, which is made of amorphous silicate (MSiO) or amorphous silicate nitride (MSiON), and an upper dielectric layer which is formed on top of the lower dielectric layer and which is made of amorphous metal oxide (M'O) or amorphous metal oxynitride (M′ON).