The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7588954 B1

PDF
Full Text
Expired
Date of Patent:
Sep. 15, 2009

Filed:

Sep. 04, 2004
Applicants:

Hans Von Kaenel, Zurich, CH;

Isabelle Sagnes, Paris, FR;

Guillaume Jacques Saint-girons, Paris, FR;

Sophie Bouchoule, Le Kremlin-Bicetre, FR;

Inventors:

Hans Von Kaenel, Zurich, CH;

Isabelle Sagnes, Paris, FR;

Guillaume Jacques Saint-Girons, Paris, FR;

Sophie Bouchoule, Le Kremlin-Bicetre, FR;

Assignee:

Epispeed S.A., Zug, CH;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

Method for making an InGaAs/GaAs quantum well laser () on a Silicon substrate (). The method comprises the steps:


Find Patent Forward Citations

Von Kaenel, Hans. (2009). Ingaas/gaas lasers on silicon produced by lepecvd and mocvd (U.S. Patent No. 7588954). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7588954

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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