The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 15, 2009

Filed:

Apr. 17, 2006
Applicants:

Chin-shan Chang, Changhua County, TW;

Wen-chun Wang, Taichung, TW;

Fa-chen Wu, Taichung, TW;

Inventors:

Chin-Shan Chang, Changhua County, TW;

Wen-Chun Wang, Taichung, TW;

Fa-Chen Wu, Taichung, TW;

Assignee:

Wintek Corporation, Taichung, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); G01F 7/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A thin film transistor liquid array substrate includes forming a plurality of amorphous silicon thin film transistors and storage capacities on a transparent substrate, wherein the amorphous silicon thin film transistors and the storage capacities are arranged in an array pattern. The storage capacitor has a top electrode and a bottom electrode, which are made of transparent conductive material to increase aperture ratio. A method of making the amorphous silicon thin film transistors and the storage capacities includes four photomask processes and a back exposure technique. Because the present invention only uses four photomask processes, the number of photomasks used in the process of the present invention is less than the conventional method, and the cost of fabrication is lower also.


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