The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7588876 B1

Expired

Date of Patent:

Sep. 15, 2009

Filed:

May. 13, 2005

Resist material and pattern formation method

Applicants:

Shinji Kishimura, Hyogo, JP;

Masayuki Endo, Osaka, JP;

Masaru Sasago, Osaka, JP;

Mitsuru Ueda, Tokyo, JP;

Hirokazu Imori, Aichi, JP;

Toshiaki Fukuhara, Kanagawa, JP;

Inventors:

Shinji Kishimura, Hyogo, JP;

Masayuki Endo, Osaka, JP;

Masaru Sasago, Osaka, JP;

Mitsuru Ueda, Tokyo, JP;

Hirokazu Imori, Aichi, JP;

Toshiaki Fukuhara, Kanagawa, JP;

Assignee:

Panasonic Corporation, Osaka, JP;

Attorney:

McDermott Will & Emery LLP

Primary Examiner:

Cynthia H Kelly

Assistant Examiner:

Anca Eoff

Int. Cl.

CPC ...

G03F 7/004 (2006.01); C08F 12/30 (2006.01);

U.S. Cl.

CPC ...

Abstract

A resist material includes a base polymer containing a compound having a unit represented by a general formula of the following Chemical Formula 1: wherein R, Rand Rare the same or different and are a hydrogen atom, a fluorine atom, a straight-chain alkyl group, a branched or cyclic alkyl group or a fluoridated alkyl group with a carbon number not less than 1 and not more than 20; Ris a straight-chain alkylene group or a branched or cyclic alkylene group with a carbon number not less than 0 and not more than 20; Ris a hydrogen atom, a straight-chain alkyl group, a branched or cyclic alkyl group or a fluoridated alkyl group with a carbon number not less than 1 and not more than 20, or a protecting group released by an acid; and Ris a group having a cyclic ester compound, a group having an alicyclic compound including a hydroxyl group or a group having a compound including hexafluoroisopropyl alcohol.

Find Patent Forward Citations

Kishimura, Shinji. (2009). Resist material and pattern formation method (U.S. Patent No. 7588876). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7588876

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile