The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 15, 2009
Filed:
Dec. 12, 2006
Andreas Weisleder, Tautenhain, DE;
Matthias Mueller, Jena, DE;
Joerg Kandler, Cospeda, DE;
Andreas Menzel, Jena, DE;
Rainer Guett, Bad Klosterlausnitz, DE;
Andreas Weisleder, Tautenhain, DE;
Matthias Mueller, Jena, DE;
Joerg Kandler, Cospeda, DE;
Andreas Menzel, Jena, DE;
Rainer Guett, Bad Klosterlausnitz, DE;
Schott AG, Mainz, DE;
Abstract
A method for producing high-purity, large-volume monocrystals that are especially radiation-resistant and have low intrinsic birefringence. From a melt of crystalline raw material, with controlled cooling and solidification, a crystal is generated. As the crystalline raw material, shards and/or waste from already-grown crystals is used, and the re-used raw material In this way, crystals can be obtained which after tempering have a BSDF value of <7×10, an RMS homogeneity after the subtraction of 36 Zernike coefficients of <15×10, an SDR-RMS value in the 111 direction of <0.2 nm/cm.