The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7586390 B1

PDF
Full Text
Expired
Date of Patent:
Sep. 08, 2009

Filed:

Feb. 02, 2006
Applicants:

Hisanori Matsumoto, Kokubunji, JP;

Tomio Iwasaki, Tsukoba, JP;

Kengo Asai, Hachioji, JP;

Nobuhiko Shibagaki, Kokubunju, JP;

Inventors:

Hisanori Matsumoto, Kokubunji, JP;

Tomio Iwasaki, Tsukoba, JP;

Kengo Asai, Hachioji, JP;

Nobuhiko Shibagaki, Kokubunju, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03H 9/15 (2006.01); H03H 9/54 (2006.01); H03H 9/13 (2006.01);
U.S. Cl.
CPC ...
Abstract

A bulk acoustic wave resonator which has excellent elasticity and high electromechanical energy conversion efficiency. A bulk acoustic wave resonator comprises a substrate, a lower electrode formed on the substrate, an interlayer formed on the lower electrode layer, a piezoelectric layer formed on the interlayer, and an upper electrode layer formed on the piezoelectric layer. Moreover, both the first lattice mismatch, which is determined between a short edge of the lattice constituting a closest packed plane of a material consisting of an interlayer and a short edge of the lattice constituting a closest packed plane of a material consisting of a piezoelectric layer, and the second lattice mismatch, which is determined between a long edge of the lattice constituting a closest packed plane of a material consisting of an interlayer and a long edge of the lattice constituting a closest packed plane of a material consisting of the piezoelectric layer, are 7% or less, and a lower electrode layer is a material in which the value of the elastic stiffness Cis 300 GN/mor more.


Find Patent Forward Citations

Matsumoto, Hisanori. (2009). Bulk acoustic wave resonator, bulk acoustic wave filter, rf module including bulk acoustic wave resonator and/or filter, and bulk acoustic wave oscillator (U.S. Patent No. 7586390). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7586390

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