The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 08, 2009
Filed:
Apr. 28, 2006
Chang-soo Lee, Chunan-si, KR;
Kyu-won Jung, Chunan-si, KR;
Chang-Soo Lee, Chunan-si, KR;
Kyu-Won Jung, Chunan-si, KR;
Samsung SDI Co., Ltd., Suwon-si, KR;
Abstract
A method of manufacturing an electron emission device where the withstanding voltage characteristics are not deteriorated due to carbon remnants. With the method, cathode electrodes, a first insulating layer and gate electrodes are sequentially formed on a substrate. Openings are formed at the gate electrodes and the first insulating layer to partially expose the surface of the cathode electrodes. A conductive layer is formed on the entire surface of the structure of the substrate. Catalytic metal layers are formed on the conductive layer at the locations to be contain electron emission regions. Electron emission regions are formed on the catalytic metal layers by directly growing a carbonaceous material thereon. The conductive layer is patterned to remove the portions thereof overlaid with carbon remnants during the previous step except for the portion placed under the catalytic metal layer.