The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 08, 2009
Filed:
Mar. 21, 2007
Jong-ho Lee, Suwon-si, KR;
Ho-kyu Kang, Yongin-si, KR;
Yun-seok Kim, Gangnam-gu, KR;
Seok-joo Doh, Suwon-si, KR;
Hyung-suk Jung, Suwon-si, KR;
Jong-Ho Lee, Suwon-si, KR;
Ho-Kyu Kang, Yongin-si, KR;
Yun-Seok Kim, Gangnam-gu, KR;
Seok-Joo Doh, Suwon-si, KR;
Hyung-Suk Jung, Suwon-si, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
A semiconductor device includes first and second transistor devices. The first device includes a first substrate region, a first gate electrode, and a first gate dielectric. The first gate dielectric is located between the first substrate region and the first gate electrode. The second device includes a second substrate region, a second gate electrode, and a second gate dielectric. The second gate dielectric is located between the second substrate region and the second gate electrode. The first gate dielectric includes a first high-k layer having a dielectric constant of 8 or more. Likewise, the second gate dielectric includes a second high-k layer having a dielectric constant of 8 or more. The second high-k layer has a different material composition than the first high-k layer.