The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 08, 2009
Filed:
Feb. 15, 2006
Applicants:
Gi Heon Kim, Daejeon, KR;
Sung Min Yoon, Daejeon, KR;
IN Kyu You, Daejeon, KR;
Seung Youl Kang, Daejeon, KR;
Seong Deok Ahn, Daejeon, KR;
Kyu Ha Baek, Daejeon, KR;
Kyung Soo Suh, Daejeon, KR;
Inventors:
Gi Heon Kim, Daejeon, KR;
Sung Min Yoon, Daejeon, KR;
In Kyu You, Daejeon, KR;
Seung Youl Kang, Daejeon, KR;
Seong Deok Ahn, Daejeon, KR;
Kyu Ha Baek, Daejeon, KR;
Kyung Soo Suh, Daejeon, KR;
Assignee:
Electronics and Telecommunications Research Institute, Daejeon, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 35/24 (2006.01);
U.S. Cl.
CPC ...
Abstract
Provided are a low temperature-cured polymer gate insulation layer and an organic thin film transistor having the same. The gate insulation layer includes an acrylate-based compound, an anhydride-based compound, and an epoxy-based compound each by 0.1 weight % or more.