The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 08, 2009
Filed:
Feb. 09, 2005
Applicant:
George K Celler, Summit, NJ (US);
Inventor:
George K Celler, Summit, NJ (US);
Assignee:
S.O.I.Tec Silicon on Insulator Technologies, Bernin, FR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method for making a crystalline wafer, in which an interface layer is associated with a support substrate. A first layer is associated with the interface layer in a strained state. The interface layer is melted sufficiently to substantially uncouple the first layer from the support substrate to relax the first layer from the strained to state to a relaxed state. The interface material is solidified with the first layer in the relaxed state to obtain a first wafer.