The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 08, 2009

Filed:

Nov. 03, 2006
Applicants:

Sunfei Fang, LaGrangeville, NY (US);

Jun Jung Kim, Fishkill, NY (US);

Thomas Dyer, Pleasant Valley, NY (US);

Inventors:

Sunfei Fang, LaGrangeville, NY (US);

Jun Jung Kim, Fishkill, NY (US);

Thomas Dyer, Pleasant Valley, NY (US);

Assignees:

International Business Machines Corporation, Armonk, NY (US);

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/72 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor device is provided wherein at least one offset spacer is reduced and a non-conformal stress liner is thereafter deposited. By depositing the non-conformal stress liner in accordance with the present invention in close stress proximity to the FET, the carrier mobility and the performance of said device is significantly enhanced. The present invention is her directed to a method of fabricating said semiconductor device.


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