The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 08, 2009
Filed:
Apr. 24, 2006
Tomoko Matsuda, Kanagawa, JP;
Takamasa Itou, Kanagawa, JP;
Tomoko Matsuda, Kanagawa, JP;
Takamasa Itou, Kanagawa, JP;
NEC Electronics Corporation, Kanagawa, JP;
Abstract
Method for manufacturing a semiconductor device, includes: forming a layer of dicobalt monosilicide (CoSi) or of cobalt (Co) on a device-forming surface of a silicon substrate in a sputter apparatus, by utilizing a predetermined temperature profile; elevating a temperature of the silicon substrate to a predetermined temperature T, which is equal to or higher than 600° C., conducted after forming the layer of Co or CoSi; and forming a layer of monocobalt monosilicide (CoSi) on the device-forming surface of the silicon substrate at a temperature equal to or higher than T, conducted after heating the silicon substrate to T, wherein, the silicon substrate is elevated to a temperature between a highest reachable temperature Tof the silicon substrate during forming the layer of Co or CoSi and the temperature Tat a temperature ramp rate of equal to or higher than 50° C./sec.