The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 08, 2009
Filed:
Feb. 10, 2006
Method of growing carbon nanotubes and method of manufacturing field emission device having the same
Applicants:
Young-jun Park, Suwon-si, KR;
Ha-jin Kim, Suwon-si, KR;
Inventors:
Young-Jun Park, Suwon-si, KR;
Ha-Jin Kim, Suwon-si, KR;
Assignee:
Samsung SDI Co., Ltd., Maetan-dong, Yeongtong-gu, Suwon-si, Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/44 (2006.01);
U.S. Cl.
CPC ...
Abstract
In a method of forming carbon nanotubes (CNTs) and a method of manufacturing a field emission display (FED) device using the CNTs, the method includes preparing a substrate on which a silicon layer is formed, sequentially forming a buffer layer and a catalyst metal layer on the silicon layer, partly forming metal silicide domains by diffusion between the silicon layer, the buffer layer and the catalyst metal layer by annealing the substrate, and growing CNTs on a surface of the catalyst metal layer.