The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 08, 2009
Filed:
Feb. 21, 2006
Applicants:
Yasutoshi Okuno, Kyoto, JP;
Michikazu Matsumoto, Kyoto, JP;
Inventors:
Yasutoshi Okuno, Kyoto, JP;
Michikazu Matsumoto, Kyoto, JP;
Assignee:
Panasonic Corporation, Osaka, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/44 (2006.01);
U.S. Cl.
CPC ...
Abstract
A gate electrode is formed on a silicon substrate, and then source/drain regions are formed at both sides of the gate electrode in the silicon substrate. Thereafter, an alloyed silicide layer is formed on the source/drain regions. The step of forming the alloyed silicide layer includes the step of depositing a first metal film, a nickel film and a second metal film in this order to form a multilayer metal film and the step of performing heat treatment after the formation of the multilayer metal film.