The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 08, 2009

Filed:

Nov. 07, 2005
Applicants:

Sang Jine Park, Fishkill, NY (US);

Chong Kwang Chang, Fishkill, NY (US);

Seok-gyu Lee, Fishkill, NY (US);

Lothar Doni, Fishkill, NY (US);

Inventors:

Sang Jine Park, Fishkill, NY (US);

Chong Kwang Chang, Fishkill, NY (US);

Seok-Gyu Lee, Fishkill, NY (US);

Lothar Doni, Fishkill, NY (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/4763 (2006.01);
U.S. Cl.
CPC ...
Abstract

A patterned anti-reflective coating may be used as a selective implant-blocking layer during fabrication of an integrated circuit transistor. In particular, the anti-reflective coating may be used as a gate sidewall spacer to block at least some dopants from an integrated circuit substrate beneath the gate sidewall spacer. Moreover, a single mask may be used when fabricating source and drain extension regions and source and drain regions of an integrated circuit transistor.


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