The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 08, 2009
Filed:
Mar. 05, 2008
Applicants:
Tae-woong Kang, Suwon-si, KR;
Jong-hyon Ahn, Suwon-si, KR;
Inventors:
Tae-Woong Kang, Suwon-si, KR;
Jong-hyon Ahn, Suwon-si, KR;
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01);
U.S. Cl.
CPC ...
Abstract
Provided are a method of fabricating an improved multi-gate transistor and a multi-gate transistor fabricated using the method, in which an active pattern is formed on a substrate, the active pattern having two or more surfaces on which channel regions are to be formed, a gate insulating layer is formed on the channel regions, and a patterned gate electrode is formed on the gate insulating layer while maintaining a shape conformal to the active pattern.
Kang, Tae-Woong. (2009). Method of fabricating multi-gate transistor and multi-gate transistor fabricated thereby (U.S. Patent No. 7585734). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7585734
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile