The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 08, 2009
Filed:
Oct. 05, 2007
Sung-kweon Baek, Suwon-si, KR;
Bon-young Koo, Suwon-si, KR;
Chul-sung Kim, Seongnam-si, KR;
Jung-geun Jee, Seoul, KR;
Young-jin Noh, Suwon-si, KR;
Sung-Kweon Baek, Suwon-si, KR;
Bon-Young Koo, Suwon-si, KR;
Chul-Sung Kim, Seongnam-si, KR;
Jung-Geun Jee, Seoul, KR;
Young-Jin Noh, Suwon-si, KR;
Samsung Electronics Co., Ltd., Suwon-Si, KR;
Abstract
A method of manufacturing a non-volatile memory device, includes forming a tunnel isolation layer comprising an oxynitride on a substrate by a simultaneous oxidation and nitridation treatment in which an oxidation process and a nitridation process are simultaneously performed using a processing gas including oxygen and nitrogen. The method further includes performing first and second heat treatments to remove defect sites from the tunnel isolation layer in gas atmospheres including nitrogen (N) and chlorine (Cl), respectively and forming a gate structure on the tunnel isolation layer after the second heat treatment, and forming source/drain regions at surface portions of the substrate adjacent to the gate structure.