The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 08, 2009
Filed:
Feb. 13, 2007
Applicant:
Ky-hyun Han, Kyoungki-do, KR;
Inventor:
Ky-Hyun Han, Kyoungki-do, KR;
Assignee:
Hynix Semiconductor Inc, Kyoungki-Do, KR;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/337 (2006.01); H01L 21/8238 (2006.01); H01L 21/8234 (2006.01); H01L 21/8242 (2006.01); H01L 21/336 (2006.01); H01L 21/8222 (2006.01); H01L 21/20 (2006.01); H01L 21/44 (2006.01); H01L 21/4763 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method for fabricating a semiconductor device includes forming an insulation structure over a substrate structure including contact plugs, etching the insulation structure to form opening regions each of which has a lower opening portion having a critical dimension wider than an upper opening portion, and forming a conductive layer contacting the contact plugs inside the opening regions.