The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 08, 2009
Filed:
Oct. 31, 2007
Hong Cho, Gyeonggi-do, KR;
Seung-pil Chung, Seoul, KR;
Hong Sik Yoon, Seoul, KR;
Kyung-rae Byun, Gyeonggi-do, KR;
Hong Cho, Gyeonggi-do, KR;
Seung-Pil Chung, Seoul, KR;
Hong Sik Yoon, Seoul, KR;
Kyung-Rae Byun, Gyeonggi-do, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
A multilayer insulating structure including a first stop layer, a first insulating layer and a second stop layer is formed on the first conductive structure. A second conductive structure and a second insulating layer are formed on the first conductive structure. The second insulating layer and the second conductive structure are etched to form a first hole and a second hole having a first radius. A spacer is formed on sidewalls of the first and second holes. The second stop layer and the first insulating layer are etched using the spacer as an etch mask to form a third hole having a second radius smaller than the first radius. A sacrificial filler is formed on the first stop layer to fill the third hole. After removing the spacer, the sacrificial filler is removed. The first stop layer is etched. A carbon nano-tube is grown from the first conductive structure.