The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 08, 2009
Filed:
Mar. 22, 2006
Akira Tsukamoto, Osaka, JP;
Akira Tsukamoto, Osaka, JP;
Panasonic Corporation, Osaka, JP;
Abstract
Provided is a manufacturing method of a CCD solid-state imaging device having such an impurity concentration distribution with which shading is reduced and formation of a buried channel endowed with a large saturation signal charge amount is made possible. The manufacturing method includes: an oxide layer forming step of forming an oxide layer () on a semiconductor substrate (); an ion implantation step of performing ion implantation through the oxide layer () to the semiconductor substrate () thereby forming a well in a position corresponding to a charge transfer portion; and an insulation layer forming step of performing insulation layer forming processing to the oxide layer () having undergone the ion implantation step, at least in a position corresponding to the well.