The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 01, 2009
Filed:
Mar. 26, 2007
Mutsuo Morikado, Yokohama, JP;
Tomoki Higashi, Yokohama, JP;
Mutsuo Morikado, Yokohama, JP;
Tomoki Higashi, Yokohama, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A semiconductor memory including a memory cell which is a MOSFET formed on an SOI substrate. The memory cell has a gate electrode connected to a word line, a drain region connected to a bit line, and a grounded source region. An operation of reading out data written in the memory cell is performed under a biasing condition by which a relationship Vd>Vg−Vthholds between a gate voltage Vg to be applied to said gate electrode, a drain voltage Vd to be applied to said drain region, a threshold voltage Vthof said MOSFET when a predetermined amount of holes are stored in a body region of the memory cell, and a threshold voltage Vthof said MOSFET when holes whose amount is smaller than the predetermined amount are stored in the body region.