The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 01, 2009
Filed:
Feb. 16, 2007
Wei-chuan Chen, Taipei County, TW;
Yung-hung Wang, Taoyuan County, TW;
Shan-yi Yang, Hsinchu, TW;
Kuei-hung Shen, Hsinchu, TW;
Wei-Chuan Chen, Taipei County, TW;
Yung-Hung Wang, Taoyuan County, TW;
Shan-Yi Yang, Hsinchu, TW;
Kuei-Hung Shen, Hsinchu, TW;
Industrial Technology Research Institute, Hsinchu, TW;
Abstract
A magnetic random access memory (MRAM) is disclosed. The MRAM includes a first electrode, an antiferromagnetic layer formed over the first electrode, a pinned layer formed over the antiferromagnetic layer, a barrier layer formed over the pinned layer, a composite free layer formed over the barrier layer, and a second electrode formed over the composite free layer. The composite free layer includes a first magnetic layer, a spacer layer and a second magnetic layer sequentially stacked over the barrier layer and the spacer layer allows parallel coupling between the first and second magnetic layers. A magnetic tunnel junction (MTJ) device suitable for a memory unit of a magnetic memory device is also provided.