The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 01, 2009
Filed:
Jul. 06, 2006
Ki Bong Song, Daejeon, KR;
Doo Hee Cho, Daejeon, KR;
Ki Bong Song, Daejeon, KR;
Doo Hee Cho, Daejeon, KR;
Electronics and Telecommunications Research Institute, Daejeon, KR;
Abstract
A photo thin film transistor having a photoconductive layer including a chalcogenide element and a unit cell of an image sensor using the same are provided. The photo thin film transistor includes a glass substrate; a photoconductive layer that is formed of GST including a chalcogenide element, is disposed on the glass substrate, and absorbs light and generates an optical current; a source electrode and a drain electrode that are formed on respective sides of the photoconductive layer and form a path for the optical current generated by the photoconductive layer; a gate insulating layer formed on the photoconductive layer; and a gate electrode that is formed on the gate insulating layer and turns the optical current on or off. The photo thin film transistor includes amorphous GST including a chalcogenide element forming a photoconductive layer, thereby providing very high photoconductivity.