The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 01, 2009
Filed:
Sep. 07, 2005
Kentaro Tamura, Kyoto, JP;
Ken Nakahara, Kyoto, JP;
Kentaro Tamura, Kyoto, JP;
Ken Nakahara, Kyoto, JP;
Rohm Co., Ltd., Kyoto-shi, JP;
Abstract
A semiconductor light emitting device is provided, in which the light emitting efficiency of a LED is improved. A semiconductor light emitting device () includes a light emitting layer () made of a GaN-based semiconductor sandwiched with an n-type GaN-based semiconductor layer () and a p-type GaN-based semiconductor layer (), and a ZnO-based or an ITO transparent electrode layer (). Further, a value of an equation represented by 3t/(A/π)−3(t/(A/π))+(t/(A/π))is 0.1 or more, where a thickness of the transparent electrode layer is represented by t and an area of the light emitting layer (light emitting area) of the light emitting device () is represented by A. The light emitting efficiency is improved using the transparent electrode layer () having an optimum thickness to the light emitting area.