The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 01, 2009
Filed:
Feb. 17, 2005
Kenichi Takeda, Tokorozawa, JP;
Tsuyoshi Fujiwara, Tokyo, JP;
Toshinori Imai, Tokyo, JP;
Tsuyoshi Ishikawa, Tokyo, JP;
Toshiyuki Mine, Tokyo, JP;
Makoto Miura, Tokyo, JP;
Kenichi Takeda, Tokorozawa, JP;
Tsuyoshi Fujiwara, Tokyo, JP;
Toshinori Imai, Tokyo, JP;
Tsuyoshi Ishikawa, Tokyo, JP;
Toshiyuki Mine, Tokyo, JP;
Makoto Miura, Tokyo, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
An MIM capacitor using a high-permittivity dielectric film such as tantalum oxide. The MIM capacitor includes an upper electrode, a dielectric film, and a lower electrode. A second dielectric film and the dielectric film are formed between the upper electrode and the lower electrode, at the end of the MIM capacitor. The second dielectric film is formed to have an opening at the top of the lower electrode. The dielectric film abuts the lower electrode via the opening. The upper electrode is formed on the dielectric film. The upper electrode and the dielectric film are formed in such a manner as to embrace the opening entirely, and the second dielectric film and the lower electrode are formed so that the respective widths are the same as, or greater than, the widths of the upper electrode and the dielectric film.