The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 01, 2009
Filed:
Jul. 20, 2006
Yu-wu Wang, Hsin Chu Hsien, TW;
Yi-kai Wang, Hsin Chu Hsien, TW;
Chen-pang Kung, Hsin Chu Hsien, TW;
Chih-wen Hsiao, Hsin Chu Hsien, TW;
Yu-Wu Wang, Hsin Chu Hsien, TW;
Yi-Kai Wang, Hsin Chu Hsien, TW;
Chen-Pang Kung, Hsin Chu Hsien, TW;
Chih-Wen Hsiao, Hsin Chu Hsien, TW;
Abstract
This invention provides a circuit structure with a double-gate organic thin film transistor device and application thereof. A protection layer covered on an organic thin film transistor structure having a bottom gate is used as another gate insulating layer. A metal layer is formed on this gate insulating layer to serve as another gate. A double-gate structure is hence accomplished. The double-gate structure can be used in a circuit. By the double-gate structure the threshold voltage of the organic thin film transistor can be adjusted, and advantageously changing the characteristic of the organic thin film transistor to improve the accuracy of signal transmission.