The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 01, 2009
Filed:
Mar. 11, 2004
Akira Kobayashi, Yokohama, JP;
Kouji Yamada, Yokohama, JP;
Hideo Kurashima, Yokohama, JP;
Tsunehisa Namiki, Yokohama, JP;
Takeshi Aihara, Yokohama, JP;
Yasunori Onozawa, Yokohama, JP;
Akira Kobayashi, Yokohama, JP;
Kouji Yamada, Yokohama, JP;
Hideo Kurashima, Yokohama, JP;
Tsunehisa Namiki, Yokohama, JP;
Takeshi Aihara, Yokohama, JP;
Yasunori Onozawa, Yokohama, JP;
Toyo Seikan Kaisha Ltd., Tokyo, JP;
Abstract
A microwave plasma processing device can form a uniform thin film on a substrate to be processed. The microwave plasma processing device includes a fixing device for fixing a substrate to be processed onto the center axis in a plasma processing chamber, an exhaust device for depressurizing the inside and outside of the substrate, a metal processing gas supply member present in the substrate and forming a reentrant cylindrical resonating system along with the plasma processing chamber, and a microwave introducing device for introducing a microwave into the plasma processing chamber to process it. A microwave sealing member is provided in a specified position of the substrate-holding portion of the fixing device, and the connection position of the microwave introducing device is set to a specified weak-field position out of a field intensity distribution formed in the interior of the plasma processing chamber.