The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 01, 2009

Filed:

Jun. 16, 2004
Applicants:

Jae Jun Lee, Gyeonggi-Do, KR;

Jong Baek Seon, Gyeonggi-Do, KR;

Hyun Dam Jeong, Gyeonggi-Do, KR;

Jin Heong Yim, Daejeon-Si, KR;

Hyeon Jin Shin, Gyeonggi-Do, KR;

Inventors:

Jae Jun Lee, Gyeonggi-Do, KR;

Jong Baek Seon, Gyeonggi-Do, KR;

Hyun Dam Jeong, Gyeonggi-Do, KR;

Jin Heong Yim, Daejeon-Si, KR;

Hyeon Jin Shin, Gyeonggi-Do, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C08G 77/60 (2006.01);
U.S. Cl.
CPC ...
Abstract

A novel multi-functional linear siloxane compound, a siloxane polymer prepared from the siloxane compound, and a process for forming a dielectric film by using the siloxane polymer. The linear siloxane polymer has enhanced mechanical properties (e.g., modulus), superior thermal stability, a low carbon content and a low hygroscopicity and is prepared by the homopolymerization of the linear siloxane compound or the copolymerization of the linear siloxane compound with another monomer. A dielectric film can be produced by heat-curing a coating solution containing the siloxane polymer which is highly reactive. The siloxane polymer prepared from the siloxane compound not only has satisfactory mechanical properties, thermal stability and crack resistance, but also exhibits a low hygroscopicity and excellent compatibility with pore-forming materials, which leads to a low dielectric constant. Furthermore, the siloxane polymer retains a relatively low carbon content but a high SiOcontent, resulting in its improved applicability to semiconductor devices. Therefore, the siloxane polymer is advantageously used as a material for dielectric films of semiconductor devices.


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