The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 01, 2009
Filed:
Aug. 14, 2008
Rajesh D. Rajavel, Oak Park, CA (US);
Mary Y. Chen, Oak Park, CA (US);
Steven S. Bui, Simi Valley, CA (US);
David H. Chow, Newbury Park, CA (US);
James Chingwei LI, Simi Valley, CA (US);
Mehran Mokhtari, Thousand Oaks, CA (US);
Marko Sokolich, Los Angeles, CA (US);
Rajesh D. Rajavel, Oak Park, CA (US);
Mary Y. Chen, Oak Park, CA (US);
Steven S. Bui, Simi Valley, CA (US);
David H. Chow, Newbury Park, CA (US);
James Chingwei Li, Simi Valley, CA (US);
Mehran Mokhtari, Thousand Oaks, CA (US);
Marko Sokolich, Los Angeles, CA (US);
HRL Laboratories, LLC, Malibu, CA (US);
Abstract
An electronic device contains a substrate, a sub-collector supported by the substrate, an un-doped layer having a selectively implanted buried sub-collector and supported by the sub-collector, an As-based nucleation layer partially supported by the un-doped layer, a collector layer supported by the As-based nucleation layer, a base layer supported by the collector layer, an emitter layer and a base contact supported by the base layer, an emitter cap layer supported by the emitter layer, an emitter contact supported by the emitter cap layer, and a collector contact supported by the sub-collector. A method provides for selecting a first InP layer, forming an As-based nucleation layer on the first InP layer, and epitaxially growing a second InP layer on the As-based nucleation layer.