The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 01, 2009
Filed:
Dec. 06, 2005
Mark Philip D'evelyn, Niskayuna, NY (US);
Xian-an Cao, New Paltz, NY (US);
Anping Zhang, Niskayuna, NY (US);
Steven Francis Leboeuf, Schenectady, NY (US);
Huicong Hong, Niskayuna, NY (US);
Dong-sil Park, Niskayuna, NY (US);
Kristi Jean Narang, Voorheesville, NY (US);
Mark Philip D'Evelyn, Niskayuna, NY (US);
Xian-An Cao, New Paltz, NY (US);
Anping Zhang, Niskayuna, NY (US);
Steven Francis LeBoeuf, Schenectady, NY (US);
Huicong Hong, Niskayuna, NY (US);
Dong-Sil Park, Niskayuna, NY (US);
Kristi Jean Narang, Voorheesville, NY (US);
Momentive Performance Materials Inc., Albany, NY (US);
Abstract
A method may produce a resonant cavity light emitting device. A seed gallium nitride crystal and a source material in a nitrogen-containing superheated fluid may provide a medium for mass transport of gallium nitride precursors therebetween. A seed crystal surface may be prepared by applying a first thermal profile between the seed gallium nitride crystal and the source material. Gallium nitride material may be grown on the prepared surface of the seed gallium nitride crystal by applying a second thermal profile between the seed gallium nitride crystal and the source material while the seed gallium nitride crystal and the source material are in the nitrogen-containing superheated fluid. A stack of group III-nitride layers may be deposited on the single-crystal gallium nitride substrate. The stack may include a first mirror sub-stack and an active region adaptable for fabrication into one or more resonant cavity light emitting devices.