The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 01, 2009
Filed:
Jul. 27, 2005
Kyung-sun Ryu, Suwon-si, KR;
Seong-yeon Hwang, Suwon-si, KR;
Kyung-Sun Ryu, Suwon-si, KR;
Seong-Yeon Hwang, Suwon-si, KR;
Samsung SDI Co., Ltd., Suwon-si, KR;
Abstract
In a method of manufacturing an electron emission device, cathode electrodes are first formed on a substrate. An insulating layer is formed on the entire surface of the substrate such that the insulating layer covers the cathode electrodes. The insulating layer is wet-etched two or more times such that openings each with an aspect ratio of more than 1 are formed in the insulating layer. Gate electrodes are formed on the insulating layer. Electron emission regions are formed on the cathode electrodes within the openings of the insulating layer. The respective etchings are conducted using separate mask patterns with the same-sized openings such that under-cuts are made.