The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7580314 B1

PDF
Full Text
Expired
Date of Patent:
Aug. 25, 2009

Filed:

Jan. 04, 2007
Applicants:

Su-a Kim, Yongin-si, KR;

Ki-whan Song, Seoul, KR;

Inventors:

Su-A Kim, Yongin-si, KR;

Ki-Whan Song, Seoul, KR;

Assignee:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 8/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A memory device includes a plurality of memory blocks. Each memory block includes a plurality of bit lines, a plurality of word lines, a plurality of memory cells provided at intersections of the bit lines and word lines; a plurality of capacitors, and a plurality of sense amplifiers. Each sense amplifier has a first input and a second input. The first input is connected to a first bit line of a first one of the memory blocks and is coupled via one of the capacitors to a first bit line of a second one of the memory blocks. The second input of the input is connected to a second bit line of the second one of the memory blocks and is coupled via one of the capacitors to a second bit line of the first one of the memory blocks.


Find Patent Forward Citations

Kim, Su-A. (2009). Memory device having open bit line structure and method of sensing data therefrom (U.S. Patent No. 7580314). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7580314

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