The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 25, 2009
Filed:
Jul. 13, 2007
Eric K. Bolton, Broomfield, CO (US);
Baker P. Scott, Boulder, CO (US);
Eric K. Bolton, Broomfield, CO (US);
Baker P. Scott, Boulder, CO (US);
RF Micro Devices, Inc., Greensboro, NC (US);
Abstract
A self-biasing negative transconductance LC oscillator that uses self-biasing circuitry to regulate a current source that feeds negative transconductance circuitry and direct current (DC) bias circuitry to apply a DC bias between control inputs and outputs of the negative transconductance circuitry is disclosed. A current source setpoint is based on the voltage swing of the oscillator, which can then be controlled by the DC power supply that powers the oscillator. In one embodiment of the present invention, the negative transconductance circuitry includes a pair of p-type metal oxide semiconductor (PMOS) cross-coupled field effect transistors (FETs), which have a limit applied to their gate to source voltages. Limiting the gate to source voltages of the FETs limits the percentage of the oscillation cycle that the FETs spend in the triode region and thus reduces the noise contribution of the FETs and allows for less power consumption for a given noise requirement.