The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 25, 2009
Filed:
Aug. 09, 2004
Applicant:
Thomas Dürbaum, Baiersdorf, DE;
Inventor:
Thomas Dürbaum, Baiersdorf, DE;
Assignee:
NXP B.V., Eindhoven, NL;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 35/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
Since parallel MOSFETs are usually driven with one gate signal in power applications, the current sharing between the MOSFETs is automatically established with regard to the characteristics of the individual MOSFETs. This may lead to a large non-uniformity of the current distribution between the MOSFETs. According to the present invention, an individual control of the on-resistances of the MOSFETs is provided, which allows for an improved current sharing between paralleled MOSFETs.