The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7579695 B1

PDF
Full Text
Expired
Date of Patent:
Aug. 25, 2009

Filed:

Jun. 17, 2008
Applicant:

Hiroyasu Ito, Nagoya, JP;

Inventor:

Hiroyasu Ito, Nagoya, JP;

Assignee:

DENSO CORPORATION, Kariya, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 23/52 (2006.01); H01L 29/40 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor device includes: a plurality of power MOS cells on a semiconductor substrate; a plurality of lead wires connecting to a source and a drain of each power MOS cell through a contact hole; a plurality of collecting electrodes connecting in parallel with the lead wires through a via hole; an interlayer protection film on the collecting electrode; a thick film electrode connecting to the collecting electrode through the opening; and a terminal protection film having an opening for bonding connection. The openings are formed in the interlayer protection film such that a portion between the openings becomes a beam shape.


Find Patent Forward Citations

Ito, Hiroyasu. (2009). Integration type semiconductor device and method for manufacturing the same (U.S. Patent No. 7579695). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7579695

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