The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 25, 2009
Filed:
Nov. 17, 2004
Masayasu Miyata, Nagano, JP;
Masamitsu Uehara, Nagano, JP;
Masayasu Miyata, Nagano, JP;
Masamitsu Uehara, Nagano, JP;
Seiko Epson Corporation, , JP;
Abstract
An semiconductor device () of the invention includes a semiconductor substrate provided with a channel region (), a source region () and a drain region (), a gate insulating film () laminated on the channel region (), and a gate electrode (). The gate insulating film () is formed of an insulative inorganic material as a main material, and further contains hydrogen. The absorbance of infrared radiation of which wave number is in the range of 3200 to 3500 cmis 0.02 or less when the gate insulating film () to which an electric field has never been applied is measured with Fourier Transform Infrared Spectroscopy at room temperature.