The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 25, 2009
Filed:
Sep. 26, 2006
Applicants:
Tae-woong Kang, Suwon-si, KR;
Hae-wang Lee, Suwon-si, KR;
Inventors:
Tae-Woong Kang, Suwon-si, KR;
Hae-Wang Lee, Suwon-si, KR;
Assignee:
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 29/41 (2006.01);
U.S. Cl.
CPC ...
Abstract
A transistor for a semiconductor device may include a lower semiconductor layer, an active pattern, including a groove region, on the lower semiconductor layer, a gate pattern at least partially overlapping the active pattern including the groove region, and a gate insulating layer interposed between the active pattern and the gate pattern, wherein a bottom surface of the groove region may be lower than a top surface of the active pattern and higher than a lower surface of the active pattern.