The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 25, 2009

Filed:

Mar. 21, 2007
Applicants:

James Gregory Couillard, Ithaca, NY (US);

Philippe Lehuede, Yerres, FR;

Sophie a Vallon, Bretigny sur Orge, FR;

Inventors:

James Gregory Couillard, Ithaca, NY (US);

Philippe Lehuede, Yerres, FR;

Sophie A Vallon, Bretigny sur Orge, FR;

Assignee:

Corning Incorporated, Corning, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/01 (2006.01);
U.S. Cl.
CPC ...
Abstract

Systems and methods for and products of a semiconductor-on-insulator (SOI) structure including subjecting at least one unfinished surface to a laser annealing process. Production of the SOI structure further may include subjecting an implantation surface of a donor semiconductor wafer to an ion implantation process to create an exfoliation layer in the donor semiconductor wafer; bonding the implantation surface of the exfoliation layer to an insulator substrate; separating the exfoliation layer from the donor semiconductor wafer, thereby exposing at least one cleaved surface; and subjecting the at least one cleaved surface to the laser annealing process.


Find Patent Forward Citations

Loading…