The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 25, 2009
Filed:
Mar. 29, 2006
Seiji Otake, Saitama, JP;
Shuichi Kikuchi, Gunma, JP;
Seiji Otake, Saitama, JP;
Shuichi Kikuchi, Gunma, JP;
Sanyo Electric Co., Ltd., Osaka, JP;
Abstract
In a semiconductor device of the present invention, a thin gate oxide film is formed on a P-type diffusion layer. On the gate oxide film, a gate electrode is formed. N-type diffusion layers are formed in the P-type diffusion layer, and the N-type diffusion layer is used as a drain region. The N-type diffusion layer is diffused in a γ shape at least below the gate electrode. With the structure described above, a diffusion region of the N-type diffusion layer expands and comes to be a low-concentration region in the vicinity of a surface of an epitaxial layer. Thus, it is possible to reduce an electric field from the gate electrode and an electric field between a source and a drain.