Image sensing device for reducing pixel-to-pixel crosstalk

Abstract

An image sensor and a method of fabricating the image sensor are provided. The image sensor includes a semiconductor substrate having a first conductivity type, a deep well having a second conductivity type. The deep well is formed at a predetermined depth in the semiconductor substrate to divide the semiconductor substrate into a first conductivity type upper substrate area and a lower substrate area. The image sensor further includes a plurality of unit pixels integrating charges corresponding to incident light and comprising first conductivity type ion-implantation areas. The first conductivity type ion-implantation areas are separated from one another. Moreover, at least one unit pixel among the plurality of unit pixels further comprises the first conductivity type upper substrate area that is positioned under a first conductivity type ion-implantation area included in the unit pixel. Further, the at least one unit pixel among the plurality of unit pixels extends beyond the first conductivity type ion-implantation area and is electrically isolated from first conductivity type ion-implantation areas included in adjacent unit pixels of the plurality of unit pixels.