The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 25, 2009
Filed:
Dec. 28, 2004
Kazuya Uejima, Tokyo, JP;
Kazuya Uejima, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
A strained Si layeris epitaxially grown on a base SiGe layer, and a gate insulating filmand a gate electrodeare formed. An impurity is then ion-implanted (FIG.A) into the base SiGe layerand the strained Si layerusing the gate electrodeas a mask, heat treatment is performed for activation, and a source/drain regionis formed (FIGS.B andC). In this instance, the film thickness of the strained Si layeris set toT, where T(=R) is the depth having the maximum concentration of the impurity in the source/drain regionof the finished MISFET.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile