The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 25, 2009
Filed:
Sep. 02, 2005
David Russel, Cambridge, GB;
Christopher Newsome, Cambridge, GB;
Thomas Kugler, Cambridge, GB;
Shunpu LI, Cambridge, GB;
David Russel, Cambridge, GB;
Christopher Newsome, Cambridge, GB;
Thomas Kugler, Cambridge, GB;
Shunpu Li, Cambridge, GB;
Seiko Epson Corporation, Tokyo, JP;
Abstract
Provided is a field-effect transistor () which comprises a metal or carbon source electrode () and a layer of a functional organic semiconductor (). A column of an injection material () extends through the layer of the functional organic semiconductor (), the column being in contact with both the source electrode () and the layer of the functional organic semiconductor (). This column () facilitates the transfer charge carriers between the source electrode () and semiconductor layer (). The injection material is preferably an organic compound such as 3-hexylthiophene, polyarylamine, poly(3,4-ethylenedioxythiophene)-polystyrenesulphonic acid or polyaniline.