The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 25, 2009
Filed:
Apr. 13, 2005
Andrew Bowdler, Walsall, GB;
Ian Brookhouse, Cheshire, GB;
Emmanuel Raptakis, Cheshire, GB;
Kratos Analytical Limited, Greater Manchester, GB;
Abstract
The present invention provides an ion selector gate having a first deflection zoneand a second deflection zonespaced from the first deflection zone, wherein in use, a single low voltage trigger pulse generated by timing electronics with a width in time equal to or proportional to the width of the gate pulse Tand at a position in time that the ion gate is required to be open to allow through ions of the correct nominal mass. The trigger pulse may go through an inverterand then to two high voltage pulsersand. The high voltage pulsers each produce simultaneously a signal that switches to ground and back on again from the same amplitude high voltage but the opposite polarity. The outputs of the high voltage pulsers are connected to interleaved wires of both ion gates. Thus, the high voltage pulsers are applied simultaneously to both ion gates.