Semiconductor device manufacturing method including oblique ion implantation process and reticle pattern forming method

Abstract

An active region and an opposite conductivity active region are formed in a semiconductor substrate. The opposite conductivity active region is covered with a resist pattern. Impurities are implanted into a surface layer of the active region. An angle θis defined as a tilt angle obtained by tilting a virtual plane perpendicular to the substrate and including an edge of the active region, toward the resist pattern by using as a fulcrum a point on the substrate nearest to the resist pattern, until the virtual plane contacts the resist pattern. The ion implantation is performed in a direction having a tilt angle larger than θand allowing ions passed through the uppermost edge of the resist pattern to be incident upon an area between the resist pattern and the active region, and is not performed along a direction allowing the ions to be incident upon the active region.