The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 25, 2009

Filed:

Mar. 29, 2006
Applicants:

David R. Ditzel, Los Altos Hills, CA (US);

James B. Burr, Foster City, CA (US);

Robert P. Masleid, Monte Sereno, CA (US);

Inventors:

David R. Ditzel, Los Altos Hills, CA (US);

James B. Burr, Foster City, CA (US);

Robert P. Masleid, Monte Sereno, CA (US);

Assignee:

Other;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/84 (2006.01); H01L 21/20 (2006.01); H01L 21/36 (2006.01);
U.S. Cl.
CPC ...
Abstract

An SOI design layout is converted to a bulk design layout. According to a method of converting a first semiconductor design layout based on an Silicon-on-Insulator (SOI) process to a second semiconductor design layout based on a bulk process, an insulator layer of the SOI process beneath active devices in the first semiconductor design layout is removed. A conductive sub-surface structure for routing voltage is added to the first semiconductor design layout. Further, the active devices from the SOI process are converted to the bulk process to form the second semiconductor design layout without requiring a relayout of the first semiconductor design layout on a semiconductor surface. The bulk design layout is utilized to fabricate a semiconductor device having a plurality of active devices.


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