The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 18, 2009
Filed:
Dec. 19, 2005
Holger Mönch, Vaals, NL;
Gero Heusler, Aachen, DE;
Holger Mönch, Vaals, NL;
Gero Heusler, Aachen, DE;
Koninklijke Philips Electronics N.V., Eindhoven, NL;
Abstract
The present invention is directed to a wavelength conversion layer () with a matrix layer () comprising embedded rare-earth-ion-doped micro-crystallites () and/or rare-earth-ion-doped amorphous particles, wherein said rare-earth-ion-doped micro crystallites and/or rare-earth-ion-doped amorphous particles are doped with at least one of the lanthanides, and wherein said rare-earth-ion-doped micro-crystallites and/or said doped amorphous particles have a mean diameter dof 10 nm to 500 müm, and wherein the matrix layer, is transparent, whereby the refractive indices of said rare-earth-ion-doped micro-crystallites and/or said rare-earth-ion-doped amorphous particles match the refractive indices of the matrix layer with an index fifference delta n such as: 0<_delta n<_0.1, for at least one wavelength in the range of 400 nm to 1200 nm.