The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 18, 2009
Filed:
Jan. 23, 2008
Applicants:
Kwi Dong Kim, Daejeon, KR;
Chong Ki Kwon, Daejeon, KR;
Jong Dae Kim, Daejeon, KR;
Inventors:
Assignee:
Electronics and Telecommunications Research Institute, Daejeon, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H02H 9/00 (2006.01); H01L 23/62 (2006.01);
U.S. Cl.
CPC ...
Abstract
Provided is an electrostatic discharge (ESD) protection circuit using a silicon controlled rectifier (SCR), which is applied to a semiconductor integrated circuit (IC). A semiconductor substrate has a triple well structure such that a bias is applied to a p-well corresponding to a substrate of a ggNMOS device. Thus, a trigger voltage of the SCR is reduced. In addition, two discharge paths are formed using two SCRs including PNP and NPN bipolar transistors. As a result, the ESD protection circuit can have greater discharge capacity.